VCSELcom

  • Grant accepted

Project

Vertical-cavity surface-emitting lasers of VCSELcom with the data transfer speed beyond 10 Gbit/s will be developed based on the patented technology of 1300 nm semiconductor quantum dot growth. Together with using of standard industrial technology of vertical-cavity surface-emitting laser manufacturing, it will reduce transmitter cost for future access networks (10G EPON - IEEE 802.3av) providing for the client high bandwidth fiber to the home (FTTH) connection. Also power consumption of the transmitter will be decreased.

Market

According to IDATE forecast, the global ultra-fast broad band FTTx market will grow by more than 150% between 2011 and 2016 and will reach 160 bln. euro. Growth of the number of connections will exceed 2.4 times and reach 198 million subscribers around the globe by 2016. This growth will demand > 500 mln. 1300 nm laser chips by the end of 2016 (> 500 mln USD) with CAGR about 8-10%. It also important to note that FTTH Council Europe forecast for Household Penetration about 20% in Russia by the end of 2016 year.


Company

VCSELcom LLC was founded by Ioffe Institute (St. Petersburg) in 2013 as a small innovative subsidiary. The founders included several Ioffe Institute employees – experts in the development of semiconductor devices based on nanoheterostructures, including verstical-cavity surface-emitting lasers (VCSELs). In the spring of 2013 the company acquired the status of a resident of the Innovative centre «Skolkovo».

Investment opportunities

€0.5 M as a co-investment for the Skolkovo grant of the Stage 1 for the development of 1300 nm range > 10 Gbit/s transmission optical sub-assembly (TOSA) based on single mode vertical-cavity surface-emitting lasers.


Team [2]